A monolithic, single crystal Gallium Nitride (GaN) material system for integrated LEDs and transistors that creates ultra-high resolution, enhanced power efficiency, higher switching speeds, and greater electrical power efficiency.
A color-tunable LED architecture with laterally-variable color formation that reduces defects and enhances display performance and resolution.
From today’s Augmented Reality (AR) applications to the near-future of smart wearables and large format displays, Micro-LED displays represent next generation technology with unmatched brightness, power efficiency, and image resolution.
Innovation Semiconductor leads the way with revolutionary Micro-LED display technologies that elevate capabilities to new heights.
Our unique, monocrystalline-material system architecture and color-tunable LEDs enable Innovation Semiconductor to design and fabricate Micro-LED displays with nanoscale resolution and the ability to generate a rainbow of colors from a single LED. This groundbreaking technology increases design flexibility while reducing or eliminating manufacturing barriers.
Only one company can deliver Micro-LED technology with such performance and design potential—Innovation Semiconductor.
Our monolithic (LED-FET) gallium nitride (GaN) material system provides high brightness efficiency and breakthrough, nano-scale resolution greater than 5,000 ppi, while also reducing power consumption and heat generation issues. The platform also offers single wafer fabrication of displays and the option to add control circuitry on the display chip.
Innovation Semiconductor offers single LED pixels from 2 microns in diameter that deliver a full range of emission across the visible spectrum. Our LEDs have a lower turn-on voltage and provide increased red efficiency from intrinsic strain relief. They can be fabricated using only conventional growth tools and are compatible with our monolithic vertical architecture. The seamless integration of our color-tunable LEDs enables efficient control and dynamic adaptation of each pixel, unlocking new possibilities for display design.
Our proprietary GaN semiconductor stack contains side emissions and enhances on-axis light emission, while delivering incredibly high resolution and consistent brightness across the entire LED array.
Innovation Semiconductor’s monolithic-material system increases production efficiency, form factor flexibility, and ease of scaling—providing a market-leading edge for our electronics fabrication partners.
Our displays feature an increased power efficiency that reduces heat generation without sacrificing brightness or performance—perfect for many electronics and AR applications.