Improved LED Emission
Innovation Semiconductor’s vertical LED-FET architecture creates brilliant, bright images with incredible resolution and uniform colors across the entire LED array.
Our proprietary technology offers breakthroughs no other company can deliver.
Single-crystal gallium nitride (GaN) material system for LEDs and driver transistors enables higher, more consistent brightness
Vertical LED-FET integration increases resolution potential with demonstrated LED diameters down to 2 µm, and subpixel pitch down to 4 µm
Periodic microscale and nanoscale emitters show more directional (on-axis) light emission
GaN transistors produce significantly higher LED switching rates
“Gate-all-around” approach reduces or eliminates sidewall emission
No separate backplane layer required
Contact us to learn more about Innovation Semiconductor’s new approach to LED emission for the next generation of Augmented Reality (AR) and display technologies.
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